specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 5 april 2010 scg015 ? watt, high linearity ingap hbt amplifier product features ? 1800 ? 2500 mhz ? 15 db gain ? +24 dbm p1db ? +40 dbm oip3 ? 5 db noise figure ? single positive supply (+8v) ? lead-free/green/rohs-compliant sot-89 package applications ? mobile infrastructure ? wlan / ism ? rfid ? defense / homeland security ? fixed wireless product description the scg015 is a high dynamic range driver amplifier in a low-cost surface mount package. the ingap/gaas hbt is able to achieve performan ce over a broad range with +41 dbm oip3 and +24 dbm of compressed 1db power and is housed in a lead-free /green/rohs-compliant sot- 89 smt package. all devices are 100% rf and dc tested. the product is targeted for us e as a gain block/driver amplifier for various current and next generation wireless technologies such as cd ma, cdma2000, and w-cdma, where high linearity and medium power is required. in addition, the scg015 will work for numerous other applications within the 1800 to 2500 mhz frequency range. functional diagram rf in gnd rf out gnd 1 23 4 pin no. function 1 input 3 output/bias 2, 4 ground specifications (1) parameter units min typ max operational bandwidth mhz 1800 2500 test frequency mhz 2140 gain db 13.5 15 input return loss db 16 20 output return loss db 10 output p1db dbm +23 +24 output ip3 (2) dbm +37.5 +40 noise figure db 5 device voltage v 5 device current ma 85 100 135 1. test conditions unless otherwise noted: 25 c, vsupply = +8 v, in tuned application circuit with rbias = 30 . 2. 3oip measured with two tones at an output power of +9 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature -55 to +150 c device current 180 ma rf input power (continuous) +15 dbm thermal resistance, rth 85 c/w junction temperature +160 c operation of this device above any of th ese parameters may cause permanent damage. typical performance (1) parameter units typical frequency mhz 1900 2140 2450 s21 db 16.5 15 14.5 s11 db -16 -20 -12 s22 db -11 -10 -9 output p1db dbm +24 +24 +23 output ip3 (2) dbm +40 +40 +40 noise figure db 5 5 5 ordering information part no. description SCG015B-G 0.2 watt, high linearity ingap hbt amplifier (lead-free/green/rohs- compliant sot-89 pkg) scg015b-pcb1960 1960 mhz fully assembled eval. board scg015b-pcb2140 2140 mhz fully assembled eval. board standard tape / reel size = 1000 pieces on a 7? reel end of life notice last time buy date: oct. 9, 2010 recommended replacement part: ah128-89g
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 5 april 2010 scg015 ? watt, high linearity ingap hbt amplifier typical device data s-parameters (v device = +5v, i cc = 100 ma, 25 c, unmatched 50 ohm system) 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 frequency (ghz) gain / maximum stable gain 10 15 20 25 30 gain (db) db(|s[2,1]|) db(gmax) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 2.50123ghz swp min 1.79083ghz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 2.50123ghz swp min 1.79083ghz notes: the gain for the unmatched device in 50 ohm system is shown as the trace in blue color. for a tuned circuit for a particular f requency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is shown in the dashed red line. the impedance plots are shown from 1800 ? 2500 mhz, with markers placed at 1.8 ? 2.5 ghz in 0.05 ghz increments. s-parameters (v device = +5 v, i cc = 100 ma, t = 25 c, unmatched 50 ohm system, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 1800 -6.70 80.76 15.90 24.47 -28.55 -25.74 -5.34 156.39 1900 -7.55 68.30 15.77 16.51 -28.96 -32.29 -4.96 156.21 2000 -8.60 53.47 15.66 7.76 -30.14 -38.84 -4.56 155.58 2100 -9.85 35.06 15.53 -1.19 -31.49 -45.79 -4.12 155.07 2200 -11.07 10.07 15.40 -10.90 -33.04 -59.63 -3.67 153.49 2300 -11.69 -21.71 15.08 -20.90 -36.28 -78.21 -3.20 150.85 2400 -10.87 -56.13 14.67 -31.83 -40.69 -106.46 -2.80 147.22 2500 -9.15 -86.03 14.14 -43.53 -42.21 163.73 -2.44 142.35 device s-parameters are available for download from the website at: http://www.wj.com application circuit pc board layout circuit board material: .014? getek, 4 - layer, 1 oz copper, microstrip line details: width = .026?, spacing = .026? the silk screen markers ?a?, ?b?, ?c?, etc. and ?1?, ?2?, ?3?, etc. are used as placemarkers for the input and output tuning sh unt capacitors. the markers and vias are spaced in .050? increments.
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 5 april 2010 scg015 ? watt, high linearity ingap hbt amplifier 1960 mhz application circuit (scg015b-pcb1960) typical rf performance at 25 c ? please see note 2 on page 1. ind id=l3 l=3.3 nh res id=r3 r=220 ohm cap id=c4 c=56 pf cap id=c5 c=56 pf cap id=c1 c=56 pf ind id=l2 l=15 nh res id=r1 r=30 ohm ind id=l1 l=15 nh cap id=c2 c=1000 pf cap cap id=c6 c=56 pf res id=r4 r=22 ohm diode1 id=d1 cap id=c8 c=1.2 pf cap id=c7 c=1.2 pf res id=r2 r=390 ohm subckt net="scg015" port p=2 z=50 ohm port p=1 z=50 ohm +8 v id=c3 c=.1uf a system using a dc regulator. boards. it is not specifically required in the final circuit layout in the diode d1 is used as over-voltage protection on the evaluation 8.2 v ssg, oip3 & p1db vs. temperature @ 1.96ghz 10 12 14 16 18 20 22 24 26 -40 -15 10 35 60 85 temperature (c) gain p1db 36 37 38 39 40 41 42 43 44 oip3 (dbm) gain p1db oip3 acpr1 vs. pout vs. temperature at 1.96ghz -70 -65 -60 -55 -50 -45 -40 11 13 15 17 pout (dbm) dbc 85c -40c 25c 2140 mhz application circuit (scg015b-pcb2140) typical rf performance at 25 c ? please see note 2 on page 1. in d id =l3 l=3.3 nh res id=r3 r=220 ohm cap id=c4 c=56 pf cap id=c5 c=56 pf cap id=c1 c=56 pf ind id= l2 l=15 nh res id=r1 r=30 ohm ind id=l1 l=15 nh cap id=c2 c=1000 pf cap cap id=c6 c=56 pf res id=r4 r=22 ohm diode1 id=d1 cap id=c8 c=1 pf cap id =c7 c=.7 pf res id =r2 r=390 ohm subc kt net="scg015" port p=2 z=50 ohm port p=1 z=50 ohm +8 v id=c3 c=.1uf a system using a dc regulator. boards. it is not specifically required in the final circuit layout in the diode d1 is used as over-voltage protection on the evaluation 8.2 v ssg, oip3, & p1db vs. temperature @ 2.14ghz 12 14 16 18 20 22 24 -40 -15 10 35 60 85 temperature (c) ssg & p1db 36 37 38 39 40 41 42 oip3 (dbm) ssg p1db oip3 frequency 1960 mhz s21 ? gain 16.5 db s11 ? input return loss -16 db s22 ? output return loss -11 db output p1db +24 dbm output ip3 ? ( +9 dbm / tone, 1 mhz s p acin g) +40 dbm channel power (@ -45 dbc acpr, is-95 9 channels fwd ) +17 dbm noise figure 5 db device voltage +5 v quiescent current 100 ma frequency 2140 mhz s21 ? gain 15 db s11 ? input return loss -20 db s22 ? output return loss -10 db output p1db +24 dbm output ip3 ? ( +9 dbm / tone, 1 mhz s p acin g) +40 dbm noise figure 5 db device voltage +5 v quiescent current 100 ma c7 placed at silkscreen marker ?a? or center of component p laced at 3.9 de g . @ 1900 mhz awa y from p in 1. c8 is placed at silkscreen marker ?7? or center of component placed at 32 deg. @ 1.9 ghz awa y from p in 3. c7 placed at silkscreen marker ?a? or center of component placed at 4.4 deg. @ 2.14 ghz away from pin 1. c8 is placed at silkscreen marker ?7? or center of component placed at 37 deg. @ 2.14 ghz away from pin 3.
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 5 april 2010 scg015 ? watt, high linearity ingap hbt amplifier 2450 mhz reference design typical rf performance at 25 c ? please see note 2 on page 1. res id=r3 r=220 ohm cap id=c4 c=56 pf cap id=c5 c=56 pf cap id=c1 c=56 pf ind id=l2 l=15 nh res id=r1 r=30 ohm ind id=l1 l=15 nh cap id=c2 c=1000 pf cap cap id=c6 c=56 pf res id=r4 r=22 ohm diode1 id=d1 cap id=c8 c=1 pf res id =l3 r=0 ohm res id =r2 r=390 ohm subckt net="scg015" port p=2 z=50 ohm port p=1 z=50 ohm +8 v id=c3 c=.1uf a system using a dc regulator. boards. it is not specifically required in the final circuit layout in the diode d1 is used as over-voltage protection on the evaluation 8.2 v c8 is placed half way between silkscreen marker ?3? and ?4? or center of component placed at 23 deg. @ 2.45 ghz away from pin 3 . ssg, oip3 and p1db vs. temperature at 2.45ghz 14 16 18 20 22 24 26 -40 -15 10 35 60 85 temperature (c) ssg & p1db 38 39 40 41 42 43 44 oip3 (dbm) ssg p1db oip3 frequency 2450 mhz s21 ? gain 14.5 db s11 ? input return loss -12 db s22 ? output return loss -9 db output p1db +23 dbm output ip3 ? ( +9 dbm / tone, 1 mhz s p acin g) +40 dbm noise figure 5 db device voltage +5 v quiescent current 100 ma
specifications and information are subject to change without notice triquint semiconductor, inc ? phone 503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 5 of 5 april 2010 scg015 ? watt, high linearity ingap hbt amplifier SCG015B-G mechanical information this package is lead-free/green/ro hs-compliant. it is compatible with both lead- free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating material on the leads is nipdau. outline drawing land pattern product marking the component will be marked with an ?s015g? designator with an alphanumeric lot code on the top surface of the package. tape and reel specifications for this part are located on the website in the ?application notes? section. esd / msl information esd rating: class 1b value: passes at between 500 and 1000v test: human body model (hbm) standard: jedec standard jesd22-a114 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated th ru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. s015g xxxx - x
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